Measurement ofElectric Characteristics of Lateral Magnetotransi stor

Atabsence ofamagnetic field measurements ofelectric characteristics ofsamples p-n-plateral dual- collector bipolar magnetosensitivity transistors indif- fusion wellarelead, whichweremadeonthebasis of SMC "Technological Center". Measurements were spentatinclusion ofthetransistor underschemeCE (commonemitter) atthetornoffcontact toasubstrate andatassociation ofcontacts ofasubstrate andbase. Communication between theattitude ofafull current ofcollectors tothegeneral current ofbaseandasub- strate withfactor ofincreasing ofa basecurrent is shown. InFig. 1thephoto offour crystals withmagneto- transistors onsilicon transitive plate isshown. Mag- netotransistors ontransitive plate on60-pin textolite toaplate werefixed. Electric connection between crystals andplate bymeansofanaluminium and copper wire wascarried out. Measurement ofelectric characteristics was spent atassociation ofcontacts ofbaseandsubstrate -avariant 1,andalso withdisconnected contact to substrate -avariant 2.