Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

A comparison has been made of the surface morphology of thin InAs films grown on GaAs (001) and (111)A substrates by molecular beam epitaxy using in situ reflection high energy electron diffraction and ex situ atomic force microscopy. InAs growth on (001) surface proceeds via the Stranski‐Krastanov mechanism, with three‐dimensional island formation beginning between one and two monolayers, but on the (111)A surface there is a two‐dimensional mode, independent of detailed growth conditions. This advantage accruing from the use of a novel index substrate provides the opportunity of fabricating a wide range of high quality heterostructures.