Proposal and demonstration of germanium-on-silicon lock-in pixels for indirect time-of-flight based three-dimensional sensing.

We propose the use of germanium-on-silicon technology for indirect time-of-flight based three-dimensional sensing, and demonstrate a novel lock-in pixel featuring high quantum efficiency and large frequency bandwidth. Compared to silicon pixels, germanium-on-silicon pixels simultaneously maintain a high quantum efficiency and a high demodulation contrast deep into GHz frequency regime, which enable consistently superior depth accuracy in both indoor and outdoor scenarios. Device simulation/fabrication/electrical-optical characterization, system performance comparison, and laser safety analysis are presented. Our work paves a new path to high-performance time-of-flight rangers and imagers, as well as potential adoption of lasers operated at a longer near infrared wavelength that falls outside of the operation window of silicon pixels.