Integrated circuit device and method of manufacturing the same

The integrated circuit device of the first gate lines and second gate lines, a first gate insulating film and the second gate insulating film and a first gate extending and spaced apart from each other on one straight line in a direction crossing the plurality of active regions on the substrate interposed between the line and the second gate line and includes a first side wall and a second speed-reduced side wall respectively in contact with the gate between the isolation regions a. For the production of integrated circuit devices, after forming a pair of source / drain regions in portions of the exposed plurality of active regions on both sides of the dummy gate line, by removing the dummy gate line to form a gate hole. After forming the gate insulating film and a gate layer in a gate hole, removing a portion of the gate layer to separate the plurality of gate lines.