FABRICATION OF GaAs/ AlGaAs QUANTUM WELL LASERS WITH MeV OXYGEN ION IMPLANTATION*
1988
MeV oxygen ion implantation in GaAs/ AlGaAs has been shown to provide
a simple and very promising technique for quantum well laser fabrication. A 10μm
stripe single quantum well (SQW) graded-index separation confinement heterostructure
(GRINSCH) laser made in this way has achieved high performance with high
quantum differential efficiency, low threshold current and good electrical isolation
characteristics. MeV oxygen ion implantation with optimum thermal annealing produces
a deep buried electrical isolation layer in n-type GaAs and reduces optical
absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated
compositional disordering as well as implanted oxygen-related deep level traps may
be considered as important effects for electrical and optical modification of interfaces
in GaAs and AlGaAs.
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