Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate

Radiation hardness on intersubband transition in proton-irradiated InGaAs/InAlAs multiple quantum wells is investigated using Fourier transform infrared absorption (FTIR) technique and compared to the results observed for the GaAs/AlGaAs multiple quantum wells. It is observed that the intersubband transition remains almost unchanged in samples irradiated with 1 MeV protons and with doses as high as 1×1014 cm-2. This dose on the other hand, was found to completely deplete the intersubband transition in GaAs/AlGaAs multiple quantum wells samples. The intersubband transition in InGaAs/InAlAs multiple quantum wells was almost washed out in samples irradiated with doses as high as 3×1015 cm-2. The partial thermal annealing recovery of the depleted intersubband transition in the proton irradiated InGaAs/InAlAs multiple quantum wells will be reported.