Study of the process of the formation of Mg(Fe0.8Ga0.2)2O4 − δ films on Si

Conditions of the synthesis of magnetic semiconductor films of composition Mg(Fe0.8Ga0.2)2O4−δ on silicon have been optimized. As the barrier layer, which prevents the interaction between the film and the substrate during high-temperature crystallization of the films, a film of nanosized silicon dioxide was used. This, together with a high homogeneity of the composition of the target, allowed us to obtain Mg(Fe0.8Ga0.2)2O4−δ films on silicon characterized by the saturation magnetization (37 A m2/kg) that noticeably exceeds that for the volumetric analog (28 A m2/kg).