Low Temperature (400°c) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications

In this study, ferroelectric properties of atomic layer deposited Hf0.5Zr0.5O2 (HZO) thin films have been investigated for the development of future ferroelectric random access memory capacitors. A 10 nm thick HZO sample annealed at 400°C for 60 s in an N2 atmosphere after TiN top electrode deposition showed large switching polarization (~45 μC/cm2) and low ferroelectric saturation voltage (~1.5 V) from pulse write/read measurement. Furthermore, fatigue measurements were performed and no significant degradation was observed until 108 switching cycles at 2 V.