DEPOSITION OF ULTRATHIN SILICON DIOXIDE FILM FROM PYROLYSIS OF TETRAETHOXYSILANE

Study of the growth of ultrathin (≤100 A) silicon dioxide (SiO2) films by thermal pyrolysis of tetraethoxysilane (TEOS) has been conducted. The oxide growth follows a first‐order or near first‐order relationship with respect to partial pressure of TEOS. The reaction appears to proceed via heterogeneous decomposition with byproduct inhibition with no incubation period. An extremely slow growth process has been investigated for depositing the SiO2 film with monolayer thickness control, which is considered to be a critical requirement for forming ultra‐large‐scale integrated devices.