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A High Density 4Mbit DRAM Process Using a Fully Overlapping Bitline Contact (FOBIC) Trench Cell
A High Density 4Mbit DRAM Process Using a Fully Overlapping Bitline Contact (FOBIC) Trench Cell
1987
Kusters
Enders
Meyberg
Benzinger
Hasler
Higelin
Rohl
Mühlhoff
Muller
Keywords:
Optoelectronics
Trench
Dram
Process (computing)
Materials science
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