A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition Using 130nm SiGe BiCMOS Process

This paper presents a 140 GHz transmitter chipset realized in a 130 nm SiGe BiCMOS technology with $f_t/f_{max}$ values of 250 GHzI 370 GHz. This design comprises of a frequency sixtupler, a balanced transconductance mixer, an amplifier and chip-to-waveguide transition. The frequency multiplier operates in wide frequency band from 110–147 GHz, while the amplifier operates between 115–155 GHz. The total DC power consumption of the chipset is 420 mW. The chip size is $\mathbf{3\ mm \times 0.73 \ mm}$ including chip-to-waveguide transition. The transmitter gives −4 dBm output power at 140 GHz and can operate between 129–148 GHz. Wireless data transmission up to 6 Gbps is measured using PSK and QAM modulation schemes.