High-quality AlN template grown on a patterned Si(111) substrate

Abstract To obtain a high-quality AlN template on a Si substrate for high-quantum efficiency AlGaN-based deep-UV LED applications, we fabricated a high-density micro-patterned Si(111) substrate. An about 8-µm-thick AlN template was grown on the Si(111) substrate in a metal-organic chemical vapor deposition reactor by using NH 3 pulsed-flow multilayer AlN growth and epitaxial lateral overgrowth methods. The template had a small X-ray full width at half-maximum with rocking curves of 620 and 1141″ for the symmetric and asymmetric (002 and 102) planes. A threading dislocation density at the best region as low as 10 7  cm −2 was also obtained.