Features of high-temperature electroluminescence in an LED n -GaSb/ n -InGaAsSb/ p -AlGaAsSb heterostructure with high potential barriers
2016
The electroluminescent properties of a light-emitting diode n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers are studied in the temperature range of 290–470 K. An atypical temperature increase in the power of the long-wavelength luminescence band with an energy of 0.3 eV is experimentally observed. As the temperature increases to 470 K, the optical radiation power increases by a factor of 1.5–2. To explain the extraordinary temperature dependence of the radiation power, the recombination and carrier transport processes are theoretically analyzed in the heterostructure under study.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
8
References
3
Citations
NaN
KQI