Strained SiGe return-type channel SOI (silicon on insulator) BiCMOS (bipolar complementary metal oxide semiconductor) integrated device and preparation method

The invention discloses a strained SiGe return-type channel SOI BiCMOS integrated device and a preparation method. The preparation method comprises growing N-Si on an SOI substrate as the collector region of the bipolar device, etching a base region by lithography, growing P-SiGe, i-Si and i-Poly-Si on the base region, preparing deep trench isolation, and preparing an emitter, a base and a collector to obtain a SiGe HBT (heterojunction bipolar transistor); etching the active region of an NMOS (n-type metal oxide semiconductor) device by lithography, and epitaxially growing five material layers in the active region to obtain the active region of the NMOS device; etching the active region of a PMOS (p-type metal oxide semiconductor) device by lithography, epitaxially growing three material layers on the active region to obtain the active region of the PMOS device, preparing the NMOS device, forming a virtual gate of the PMOS device, and implanting to form the source and drain of the PMOS device by self-alignment process; and etching the virtual gate to complete the preparation of the PMOS device, and preparing the strained SiGe return-type channel SOI BiCMOS integrated device and circuit with a conductive channel of 22 to 45nm of the MOS device. The preparation method provided by the invention adopts the self-alignment process and fully utilizes the characteristics of carrier mobility anisotropy of the strained SiGe material to prepare the performance-enhanced strained SiGe return-type channel SOI BiCMOS integrated circuit.