High-current-density thin-film silicon diodes grown at low temperature

High-performance thin-film silicon n–i–p diodes are fabricated at temperatures below 160°C using hot-wire chemical vapor deposition. The 0.01mm2 diodes have a forward current-density of near 1000A∕cm2 and a rectification ratio over 107 at ±2V. Use of microcrystalline silicon i and n layers results in higher current-density diodes than with amorphous silicon, primarily by lowering a barrier to carrier injection. A 30nm intrinsic Si buffer layer between the i and p layers is needed to reduce the reverse leakage current. Minimizing diode area increases forward current density by reducing the voltage drop across the external series resistances.