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SAFE OPERATING AREA OF 4H-SIC SCHOTTKY DIODES UNDER THE IMPACT OF HEAVY CHARGED PARTICLES
SAFE OPERATING AREA OF 4H-SIC SCHOTTKY DIODES UNDER THE IMPACT OF HEAVY CHARGED PARTICLES
2019
P. S. Gromova
A. S. Tararaksin
A. S. Kolosova
Dmitry V. Boychenko
V. N. Vyuginov
V.V. Luchinin
Specialized Electronic Systems
Svetlana-Elektronpribor Jsc
Keywords:
Safe operating area
Schottky diode
Charged particle
Materials science
Optoelectronics
Correction
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