Room-temperature fabricated, fully transparent resistive memory based on ITO/CeO2 /ITO structure for RRAM applications

Abstract Fully transparent resistive random access memory (TRRAM) device based on CeO 2 as active layer using indium-tin-oxide (ITO) electrodes was fabricated on glass substrate. The ITO/CeO 2 /ITO memory device shows 81% transmission of visible light, optical band gap energy of 4.05 eV, and exhibits reliable bipolar resistive switching behavior. X-ray diffraction of CeO 2 thin films demonstrated a weak polycrystalline phase. The low field conduction is dominated by Ohmic type while Poole–Frenkel effect is responsible for conduction in the high field region. The device reliability investigations, such as data retention (over 10 4  s) under applied stress and endurance tests conducted at room temperature and 85 °C show potential of our TRRAM devices for future non-volatile memory applications.