MOVPE-Grown Enhancement Mode HIGFET on 150 mm GaAs

Eric S. Johnson,Adolfo Reyes,N. Cody,Mark Rittgers

MOVPE-Grown Enhancement Mode HIGFET on 150 mm GaAs

2001

Eric S. Johnson
Adolfo Reyes
N. Cody
Mark Rittgers

Enhancement mode HIGFETs have been grown by low pressure MOVPE on 150 mm diameter GaAs substrates using a single wafer MOVPE reactor. The MOVPEgrown HIGFET devices have rf performance exceeding the best HIGFET devices from commercially-available, MBE-grown epi.

Keywords:

Metalorganic vapour phase epitaxy
Electronic engineering
Wafer
Materials science
Optoelectronics

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