Old Web
English
Sign In
Acemap
>
Paper
>
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN HEMTs
2018
Mukherjee Kalparupa
Frédéric Darracq
Arnaud Curutchet
Nathalie Malbert
Nathalie Labat
Keywords:
Leakage (electronics)
Electronic engineering
Materials science
Correction
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]