Direct Bonding of Gallium Arsenide on Silicon.

Direct bonding of gallium arsenide on silicon is studied. The technology is expected to enable the easy integration of gallium arsenide optoelectronic devices with silicon very-large-scale integrated circuits. The interface quality of n-GaAs/p-Si can be improved with a thermal annealing process. It is examined by the current-voltage characteristics of the n-GaAs/p-Si diode. The bonding strength was found to be sufficiently high and could "high enough to" withstand the subsequent grinding and polishing procedures of the bonded wafers.