Etudes microlithographiques de résines négatives renfermant des unités tétrathiafulvalènes sensibles aux électrons

Pour resoudre le phenomene de gonflement qui limite la resolution des resines micro lithographiques classiques, nous nous sommes interesses a de nouvelles resines avec lesquelles ce phenomene n'apparaǐt pas. Nous avons retenu pour notre etude les resines R qui renferment en melange un polymere porteur de radicaux tetrathiafulvalenylcarbonyloxymethyles et le dibromotetrachloroethane. Afin de voir l'influence de la nature du radical porteur de l'unite tetrathiafulvalene dans le polymere sur les proprietes microlithographiques des resines R, nous nous sommes egalement interesses aux polymeres renfermant des radicaux tetrathiafulvalenoxymethyles. Les resines R ont ete testees sous irradiation electronique. Leurs sensibilites dependent en outre de la valeur de la masse molaire du polymere. Des resolutions comprises entre 0,1 et 0,4 μm ont ete obtenues. Ce type de resines possedent un certain nomber de proprietes interessantes telles que des sensibilites elevees et de bonnes resolutions. In order to solve the polymer swelling which limits the resolution for negative resists, new resists (R) including polymers containing the tetrathiafulvalenylcarbonyloxymethyl radical and dibromotetrachloroethane were developed where the swelling does not appear. In order to study the influence of the nature of the radical bearing the tetrathiafulvalene unit in the polymers upon the microlithographic properties of the R resists, polymers containing the tetrathiafulvalenylphenoxymethyl radical were also studied. The resists have been tested under electron beam irradiation. The dependence of resist sensitivity on molecular weight is reported. Resolutions between 0,1 and 0,4 μm were obtained. These resists are shown to have a desirable combination of properties, including high sensitivity and high resolution.