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Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks
Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks
2005
Martine Claes
Vasile Paraschiv
S. Beckx
M. Demand
W. Deweerd
Sylvain Garaud
Harald Kraus
Rita Vos
James Snow
W. Boullart
Stefan De Gendt
Keywords:
Dry etching
Metal gate
High-κ dielectric
Composite material
Materials science
Stack (abstract data type)
Metallurgy
Correction
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