Wall Conditioning with a High Magnetic Field in HT-7 Superconducting Tokamak

ICRF wall conditioning techniques, which includes the hydrogen removal, impurity cleaning, boronization and siliconization, were described in this paper. This new technique has been demonstrated to be very effective for wall conditioning, recycling, isotopic control and used daily during experiments. The RF plasma parameters were measured as T"= 3-8 eV, Ti= 0.5-2 keY, n" = 0.3-5 x l0l7 m-3 by different diagnostics. The nontoxic and nonexplosive solid carborane powder was used for the RF boronization. Energetic ions cracked the carborane molecule and the boron ions impacted and deposited onto first wall. Comparing with GDC boronization, the B/C coating film shows the higher adhesion, better uniformity and longer lifetime to the plasma discharges. Siliconization was carried out by using a high field side long RF antenna, which made the discharge more uniform. The ratio of SiFIa to helium is about 5:95 at the pressure range of P" = 0.8-8 x 10-2 Pa. Compare with boronization, it showed quicker recovery from a bad wall condition due to leakage of air to good wall condition. Plasma density could be easily controlled after siliconization. But the lifetime is much shorter than that obtained by boronization. Plasma performance has been improved after RF boronization and siliconization.