Parallel-kinematics XYZ MEMS part 2: Fabrication and experimental characterization

Abstract This paper, the second of a set of two papers addressing parallel-kinematics MEMS stages for spatial translation, deals with fabrication, characterization and control of such devices. Double device layer SOI (silicon-on-insulator) substrates are used, providing three layers (two device layers and the handle) into which the elements of the stage can be mapped. Using the mechanism concept, realization scheme, and kinematic and dynamic models developed in the first paper of this set, this paper provides a detailed approach to fabricating these devices. The stages fabricated have a workspace cube of roughly 20 μm on the side, an in-plane stiffness of 96 N/m, and an out-of-plane stiffness of 166 N/m. Further, it characterizes the performance of the individual actuating and sensing elements, configures feedback controllers for each actuated joint, and assesses and verifies the stage’s designed performance. Finally, it demonstrates full 3-axis, closed-loop positioning of a MEMS stage.