A novel extraction method of device parameters for thin-film transistors (TFTs)

Abstract Accurately extracting device parameters plays an import role in the application and development of TFTs. Although several methods have been proposed to extract the device parameters of TFT devices with amorphous channel materials, these current methods are unsuitable for AOS TFT devices, due to the different charge transport mechanisms. Here, a novel method of extracting device parameters has been presented for IGZO TFTs. The proposed method can accurately and quickly extract device parameters of TFTs through the simple mathematical process for transfer curves. Based on the proposed method, the critical parameters in IGZO TFT devices, such as γ, V t h and μ 0 , were obtained. And the temperature dependence of device parameters has been discussed in detail.