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Reverse Characteristics of Field Plate Edge Terminated SiC Schottky Diode with $SiO_2$ formed Various Methods
Reverse Characteristics of Field Plate Edge Terminated SiC Schottky Diode with $SiO_2$ formed Various Methods
2004
W. Bahng
H. J. Cheong
N. K. Kim
S C Kim
K.S. Seo
H. W. Kim
K.Y. Cheong
E. D. Kim
Keywords:
Optoelectronics
Silicon carbide
Schottky diode
Materials science
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