Studies of sintering temperature on the microstructure, magnetic and dielectric behavior of CaCu 3 Ti 3.5 Mn 0.5 O 12 ceramic synthesized by semi-wet route

The CCTMO (CaCu3Ti3.5Mn0.5O12) ceramic has been prepared by using the semi-wet method and sintered at 1223 K, 1323 K, and 1373 K, respectively for 8 h. The XRD, as well as TEM, have been to confirm the phase formation of CCTMO ceramics. The crystalline size of CCTMO was found in the range of 38–70 nm at different sintering temperatures. The route-mean square, as well as average roughness, was occurred by AFM technique 7.55 nm and 9.23 nm, respectively, sintered at 1373 K. The P-E hysteresis loop shows the ferromagnetic behavior of CCTMO at room temperature for all samples. The zero-field cooled (ZFC), field cooled (FC) and Magnetic hysteresis (M-H) curve shows temperature-dependent ferromagnetic behavior of CCTMO ceramic. The dielectric constant (ɛr) at 10 kHz decreases with increasing sintering temperature due to semiconducting grains and insulating boundaries supported by internal barrier layer capacitance modal (IBLC) in Mn-doped CCTO ceramic.