Old Web
English
Sign In
Acemap
>
Paper
>
Three-dimensional device simulation of Si IGBTs -- Investigation of physical models and comparisons with measurements
Three-dimensional device simulation of Si IGBTs -- Investigation of physical models and comparisons with measurements
2020
N Shigyo
Masahiro Watanabe
Kuniyuki Kakushima
Takuya Hoshii
Kazuyoshi Furukawa
Akira Nakajima
Katsumi Satoh
Tomoko Matsudai
Takuya Saraya
Toshihiko Takakura
Kazuo Itou
Munetoshi Fukui
Shinichi Suzuki
Kiyoshi Takeuchi
Hitoshi Wakabayashi
Iriya Muneta
Shinichi Nishizawa
Kazuo Tsutsui
Toshiro Hiramoto
Hiromichi Ohashi
Hiroshi Iwai
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]