C(V) characterization of metal/polysilicon/oxide/monosilicon structure

Abstract In this work, we present the C ( V ) capacitance characteristics of metal/polysilicon/silicon oxide/monosilicon (MS P OS) structures. From the obtained C ( V ) curves, we have studied the behavior of the capacitance at high frequency, the effect of the monosilicon doping on the C ( V ) characteristics and extracted the physical and technological parameters of the structure. The shape of the obtained curves is different from the classical C ( V ) characteristics. The curve presents a combination of two C ( V ) characteristics of the MOS and MOS P structures. One result was with positives bias voltages, the other with negative voltages. For a substrate doping concentration N Dm =10 18  cm −3 , the characteristic presents more important capacitance variation compared to one with N Dm =10 16  cm −3 .