Development of 1.3 micron oxide-confined VCSELs grown by MOCVD

An Emcore D180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micrometers InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The 1.3 micrometers VCSEL consists of double GaInNAs/GaAs quantum well active region and 1(lambda) cavity with DBRs consisting of alternating layers of GaAs/AlGaAs to obtain a large difference in index of refraction. Wavelengths ranging from 1.275 to 1.31 micrometers have been investigated. The room temperature peak power measured to date is approximately 1 mW, with a slope efficiency of 0.13 mW/mA and a threshold current of 1.5 mA.