High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function $\hbox{Ir}_{3}\hbox{Si}$ Gate

We report a novel 1000 degC stable HfLaON p-MOSFET with Ir 3 Si gate. Low leakage current of 1.8times10 -5 A/cm 2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm 2 /Vmiddots are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degC rapid thermal annealing is fully compatible to current very large scale integration fabrication lines