Low-Noise GaN p-i-n Avalanche Photodiodes for Ultraviolet Applications Using an Ion-Implantation Isolation Technique

We report high-performance GaN avalanche photodiodes using a novel ion implanted isolation technique. The devices showed low dark current, an equivalent noise power of < 5 × 10−16 WHz−0.5 and avalanche gain of 7 × 105 at λ = 280 nm.