Ion beam synthesis of narrow Ge nanocluster bands in thin SiO 2 films

Abstract This paper reports on self-organization of narrow bands of Ge nanoclusters in thin thermally grown SiO 2 layers by means of ion beam synthesis. Although the implanted Ge profile is distributed over almost the whole SiO 2 , a δ-like nanocluster band very close to, but well separated from the Si SiO 2 interface is formed under specific implantation and annealing conditions. The evolution of this band can be explained by a model taking into account collisional ion beam mixing and reactions near the Si SiO 2 interface, which is in good agreement with the experimental results.