Charge carrier recombination and diffusion in InGaAs(P) epitaxial layers
1993
The method of picosecond light-induced grating is used for the investigation of non-equilibrium charge carrier dynamics in epitaxial layers of InGaAsP, InGaAs and InP. The carrier recombination time τR and the diffusion coefficient Da are determined. The influence of bleaching on the revealed values is discussed.
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