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High-Quality PECVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOS-HFET
High-Quality PECVD SiO2 for Normally-off AlGaN/GaN-on-Si Recessed MOS-HFET
2015
차호영
Keywords:
Optoelectronics
Plasma-enhanced chemical vapor deposition
quality
normally off
algan gan
Materials science
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