Effect of two yellow delta-emitting layers on device performance of phosphorescent white organic light-emitting devices

Abstract Phosphorescent white organic light-emitting devices (WOLEDs) with a structure of ITO/TAPC/δ-EML1/mCP:FIrpic/δ-EML2/Bphen/Mg:Ag were fabricated, wherein two ultrathin and host-free emitting layers (EMLs) were formed by using yellow bis[2-(4-tertbutylphenyl)benzothiazolato-N,C 2 ′] iridium (acetylacetonate) [(tbt) 2 Ir(acac)] and referred to as delta-EMLs (δ-EML1 and δ-EML2). By adjusting the thicknesses of δ-EMLs, a maximum current efficiency of 27.6 cd/A, an external quantum efficiency (EQE) of 10%, together with low efficiency roll-off at high luminance were achieved. The results showed that δ-EML1 played a dominant role on charge carrier trapping, while δ-EML2 had major impact on yellow light emission, which were highly sensitive to the location of δ-EMLs. Furthermore, by introducing 5-nm Au as anode modifying layer, high device efficiency was maintained along with excellent color stability of warm white emission, displaying color coordinates of (0.38, 0.42) and color temperature of 4348 K at a luminance of 7000 cd/m 2 . Importantly, explanation and analysis for the influence of both ultrathin δ-EMLs and anode modifying layer on device performance were proposed.