Characterization of ion-induced sodium migration in various kinds of silicon oxide films

Abstract The migration behavior of Na in SiO 2 films during SIMS depth profiling was characterized, and effects of the chemical structure and defects in the film on Na migration were investigated. Several types of SiO x N y samples were prepared and the relationship between Na migration behavior and the type of the films was determined. It is clarified that not only defects formed by ion-implantation but also porousness of the film accelerate the Na migration during SIMS analysis and it is suggested that reducing Na migration in such low-density SiO 2 film is quite difficult. On the other hand, it was shown that Si–N bonds in the film are effective in suppressing the migration of Na. Thus the Na migration during SIMS analysis is affected by the structure of the film, and there is the possibility of obtaining information on the chemical structure of the films.