Comparison of N- and P-type silicon irradiated by MeV protons and post-annealed at different temperatures

Abstract We irradiated N- and P-type silicon with 1.5 MeV protons at fluences of 10 12 , 10 13 and 10 14 cm −2 . After irradiation, the irradiated samples were studied by the spreading resistance method in order to determine the profiles of the defects before and after different thermal annealings. The measurements were performed as a function of annealing temperature and time. While P- and N-type silicon present the same behaviour after irradiation, many differences arise after annealing. In particular, the N-type samples show a conductivity layer at the end of the proton range (Rp) unlike the P-type samples.