Secondary defects engineering in c-Si: Influence of implantation dose, temperature, and oxygen concentration

The influence of implantation temperature, dose, and oxygen concentration was investigated for 230 keV phosphorus implantation in crystalline silicon. It was found that oxygen impurities act as nucleation centers for extended defects, which increases their density in O-rich samples compared to conventional c-Si. For doses below 2×1014 P/cm2, the density of extended defects varies rapidly with dose and depends weakly on implantation temperature while for higher doses, the extended defect density varies linearly with dose and depends strongly on implantation temperature. Using a simple criterion for extended defect formation, the dose at which temperature control of extended defects becomes efficient is evaluated for several ion species and energies.