Low-divergence-angle 808-nm GaAlAs/GaAs laser diode using an asymmetric-cladding structure

We present a single-mode, 808 nm, AlInGaAs/AlGaAs/GaAs, strained, quantum-well laser with a record low, vertical divergence-angle of 12 degrees and high slope-efficiency of 1.0 W/A. Epitaxial-up mounted devices have operated with no measurable degradation at 150 mW, 50°C for 3500 hours.