0.1 /spl mu/m enhancement-mode pseudomorphic InGaAs/InAlAs/InP HEMT

We present state-of-the-art performance of 0.1 /spl mu/m enhancement-mode (E-mode) pseudomorphic InGaAs/InAlAs/InP HEMTs fabricated on 3-inch wafers in a production environment. The E-mode HEMTs have a cutoff frequency of 210 GHz, transconductance of 1180 mS/mm, and less than 1 mA/mm Idss (drain current at a gate bias of zero volts), measured at a drain bias of 1 V. The device characteristics make the E-mode HEMTs suitable candidates for ultra-high-speed digital and analog applications. Low noise amplifiers utilizing E-mode HEMTs, which were fabricated on 3-inch wafers in TRW's InP production line, demonstrated excellent repeatability, performance, yield and uniformity.