Open-Circuit Mobility Measurements in DLC Thin Films

Drift mobility in DLC thin films proves to be of the order of 10-6 cm2/Vs and its activation energy is about 0.035 eV. This suggest that hopping transport is a dominant mechanism of charge transport. Computer simulation of charge transport in thin films under open-circuit conditions for volume charge generation has been carried out. The computer simulation is to improve the interpretation of results obtained by means of generation with an electron gun.