A breakdown enhanced AlGaN/GaN MISFET with source-connected P-buried layer

Abstract This paper presents a breakdown-enhanced AlGaN/GaN MISFET with a source-connected P-buried layer combined with field plates (SC-PBL FPs MISFET). A TCAD tool was used to analyze the breakdown characteristics of the proposed structure, and results show that in comparison to the conventional gate field plate MISFET (GFP-C MISFET), the proposed structure provides a significant increase of breakdown voltage ( V BK ) due to redistribution of electric field in the gate-drain region induced by the SC-PBL and the FPs. The optimized SC-PBL FPs MISFET with a gate-drain spacing of 6 μm achieved a high Baliga’s figure of merit of 2.6  GW  cm −2 with a corresponding breakdown voltage ( V BK ) of 1311.62 V and specific on resistance ( R ON,sp ) of 0.66 mΩ cm 2 , which demonstrates a good trade-off between R ON,sp and V BK compared to the GFP-C MISFET with V BK of 524.27 V and R ON,sp of 0.61 mΩ cm 2 .