Nearly-zero valence band and large conduction band offset at BAlN/GaN heterointerface for optical and power device application

Finally, we acknowledge the funding support from KAUST Baseline BAS/1/1664-01-01, KAUST Competitive Research Grant URF/1/3437-01-01, and the GCC Research Program REP/1/3189-01-01. Y.J.P, T.D, and R.D.D. at Georgia Tech acknowledge the funding support from NSF under Grant No. DMR-1410874 and the DARPA under Grant No. W911NF-15-1-0026, and also the support of the Georgia Research Alliance and the Steve W. Chaddick Endowed Chair in Electro-Optics.