Al‐doped and Sb‐doped polycrystalline silicon obtained by means of metal‐induced crystallization

Thin‐film multilayer structures of a‐Si/Al/a‐Si and a‐Si/Sb/a‐Si were deposited by electron‐beam evaporation. The microstructure and the electrical properties of as‐deposited and annealed (T<1370 K) thin films were determined. A p‐n junction was formed between polycrystalline silicon (poly‐Si) doped with Sb and a p‐type Si substrate. Al and Sb were found to induce crystallization of a‐Si at 600 and 700 K, respectively. After annealing to 1370 K for 60 min, the resistivities 7.0×10−3 Ω cm for the Al‐Si sample and 1.4×10−2 Ω cm for the Sb‐Si sample were obtained. Passivation of poly‐Si grain boundaries by Sb is proposed.