A method for reading a multilevel phase change memory cell, as well as phase change memory

A method for reading a multilevel phase change memory cell, the method comprising: Selecting a plurality of bit lines and a plurality of PWS-cells which are each connected to a corresponding one of the plurality of selected bit lines; Applying a first bias voltage (V Flowing comparing a first read current (I Determining whether the selected PWS-cell is in the reset state based on the comparing the first reading current (I Applying a second bias voltage (V and Deselect each of the selected PWS-cells for which a current programming state has been set.