Structure and optical properties of ZnSeO alloys with O composition up to 6.4

Abstract II–VI-O type alloy semiconductor ZnSeO (O composition up to 6.4%) is grown by molecular beam epitaxy. O composition increases with O 2 flow rate. Several XRD peaks are observed when O composition is 2–4%, indicating phase separation. Growth at low temperature results in higher O composition. Photoluminescence intensity of ZnSeO lattice matched to GaAs is much stronger than that of ZnSe and peak shifts to lower energies with increasing O composition. Photoreflectance spectroscopy is performed to investigate the band gap energy. The band gap energy investigated by photoreflectance decreases with increasing O composition due to large band gap bowing even when phase separation occurs. The bowing parameter is estimated as 8.4 eV.