Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sources

Abstract The chemical beam epitaxy (CBE) growth of InGaAs lattice matched to InP has been compared using the three Ga precursors triethylgallium (TEG), triisobutylgallium (TIBG) and triisopropylgallium (TIPG) in conjunction with trimethylindium (TMI). All three Ga precursors exhibit similar behaviour, with the Ga content of the epilayers falling rapidly as the temperature moves outside a narrow growth window centred at 500°C. The Ga: In concentration ratio also depends on the group V: III flux ratios used during growth. No significant relaxation of the tight control of growth conditions required to grow lattice-matched InGaAs reproducibly is offered by TIPG or TIBG, in comparison to TEG.