Diode-pumped Yb/sup 3+/:Sr/sub 5/(VO/sub 4/)/sub 3/F laser

Summary form only given. Recent publications show high slope efficiencies, high emission cross section, and low laser threshold for Yb/sup 3+/ in appatite host structures. We have developed a Czochralski technique for producing SVAP crystalline boules with up to 6% Yb (by weight in the starting melt). Contrary to common practice in growing oxyfluoride crystals, high oxidation in the growth atmosphere produces better quality SVAP single crystals. Large crystalline boules were grown without the tendency toward grain boundaries, cracks, or spiraling, suggesting that our method can make this host market-ready. Diode-pumped operation of Yb/sup 3+/:SVAP was achieved for the first time by generating emission at 906 nm from a new high brightness InGaAs/AlGaAs laser diode which overlapped well with the broad absorption at 905 nm.