PbTiO3-PbO-SiO2 Glass-Ceramic Thin Film by a Sol-Gel Process.

PbTiO3(PT)-PbO-SiO2 glass-ceramic thin films were pro-duced by a sol-gel process. The crystallization of PT oc-curred at ∼700°C and was higher than that in PT-PbO-B2 O3 sol-gel glass-ceramics. A pinhole-free thin film was obtained by a rapid thermal annealing process when the designed glass-forming phase content in the thin film was >24 vol%. The measured dielectric constants of the films fairly agreed with the predicted values, based on a parallel mixing model. The dielectric constant was 219 and the di-electric loss was 0.04 in the 0.6PT-0.4(PbO-SiO2) film that was fired at 700°C.